NTMKE4891NT1G
MOSFET N-CH 25V 26.7A 4ICEPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMKE4891NT1G is a 25V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 2.6mOhm at 29A and 10V Vgs, facilitating efficient power switching. Continuous drain current capabilities are rated at 26.7A at 25°C ambient and 151A at 25°C case temperature, with a maximum power dissipation of 2.8W (ambient) and 89W (case). The NTMKE4891NT1G utilizes a 4-ICEPAK - E1 PAD (6.3x4.9) surface mount package, suitable for high-density designs. Key electrical parameters include a gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 4360 pF at 15V Vds. Operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-ICEPAK |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26.7A (Ta), 151A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 4-ICEPAK - E1 PAD (6.3x4.9) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 15 V |
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