NTMKB4895NT1G
MOSFET N-CH 30V 15A/66A 4ICEPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMKB4895NT1G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 15A at typical ambient temperature (Ta) and 66A at case temperature (Tc). Its low on-resistance of 6mOhm at 15A and 10V Vgs makes it suitable for demanding switching applications. The device offers a maximum power dissipation of 2.2W (Ta) and 42W (Tc), supported by its 4-ICEPAK surface mount package with a B1 PAD (4.8x3.8) for enhanced thermal performance. Key electrical parameters include a gate charge (Qg) of 25 nC (max) at 10V and input capacitance (Ciss) of 1644 pF (max) at 15V. The NTMKB4895NT1G operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging. This MOSFET is commonly utilized in power management, automotive, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-ICEPAK |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 4-ICEPAK - B1 PAD (4.8x3.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1644 pF @ 15 V |
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