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NTMJS1D15N03CGTWG

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NTMJS1D15N03CGTWG

WIDE SOA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMJS1D15N03CGTWG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and can handle a continuous drain current of 45A at 25°C ambient temperature, scaling up to 257A at 25°C case temperature. Its low on-resistance is 1.15mOhm maximum at 20A and 10V gate-source voltage. The device boasts a Wide SOA rating, with a maximum power dissipation of 3.8W (Ta) and 125W (Tc). Key electrical characteristics include input capacitance (Ciss) of 7300pF maximum at 15V and a gate charge (Qg) of 94nC maximum at 10V. Operating across a temperature range of -55°C to 175°C, this MOSFET utilizes MOSFET (Metal Oxide) technology and is housed in an 8-LFPAK (SOT-1205) package. It is supplied on a Tape & Reel (TR). This component is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-1205, 8-LFPAK56
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs1.15mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.2V @ 160µA
Supplier Device Package8-LFPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 15 V

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