NTMJS1D0N04CTWG
MOSFET N-CH 40V 46A/300A 8LFPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMJS1D0N04CTWG is an N-Channel Power MOSFET designed for demanding power applications. This component features a 40 V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 46 A at 25°C ambient temperature, scaling to 300 A at 25°C case temperature. With a low on-resistance (Rds On) of 0.92 mOhm at 50 A and 10 V gate drive, it minimizes conduction losses. The device boasts a maximum power dissipation of 3.9 W (Ta) and 166 W (Tc), supporting high-power density designs. Key electrical characteristics include a maximum gate charge (Qg) of 86 nC and input capacitance (Ciss) of 6100 pF at 25 V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is housed in an 8-LFPAK package, suitable for surface mounting. Its robust design finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.92mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 190µA |
| Supplier Device Package | 8-LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
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