NTMJS0D9N03CGTWG
MOSFET N-CH 30V LFPAK8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMJS0D9N03CGTWG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 50A at ambient temperature, scaling to 315A under specific thermal conditions. With a low on-resistance of 0.9mOhm at 20A and 10V gate drive, it minimizes conduction losses. The device boasts a maximum power dissipation of 3.9W (Ta) and 150W (Tc), supported by a high junction temperature rating of 175°C. Key parameters include a gate charge (Qg) of 131.4 nC at 10V and input capacitance (Ciss) of 9550 pF at 15V. Packaged in an 8-LFPAK (SOT-1205), this surface-mount device is suitable for power management, automotive, and industrial power switching applications. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta), 315A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 200µA |
| Supplier Device Package | 8-LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 131.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9550 pF @ 15 V |
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