NTMJS0D8N04CLTWG
MOSFET N-CH 40V 56A/368A 8LFPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMJS0D8N04CLTWG is an N-Channel MOSFET designed for high-performance applications. This device offers a Drain to Source Voltage (Vdss) of 40V and can handle a continuous drain current of 56A at ambient temperature (Ta) and up to 368A at case temperature (Tc). The low on-resistance of 0.72mOhm at 50A and 10V Vgs, coupled with a maximum gate charge of 162 nC @ 10V, ensures efficient switching. It features a low input capacitance (Ciss) of 9600 pF @ 25V. The power dissipation is rated at 4.2W (Ta) and 180W (Tc). This MOSFET utilizes Metal Oxide technology and is housed in an 8-LFPAK package (SOT-1205) for surface mounting, supplied on tape and reel. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for demanding power management solutions across various industries including automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta), 368A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.72mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 25 V |
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