NTMJS0D7N03CGTWG
WIDE SOAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMJS0D7N03CGTWG is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) rating of 59 A at 25°C ambient and 410 A at 25°C case temperature. The NTMJS0D7N03CGTWG offers a low on-resistance (Rds On) of 0.65 mOhm at 30 A and 10 V Vgs, contributing to reduced conduction losses. Its Wide SOA (Safe Operating Area) ensures robust performance under demanding conditions. With a maximum power dissipation of 4 W (Ta) and 188 W (Tc), this MOSFET is suitable for use in sectors such as automotive, industrial power supplies, and consumer electronics. The component is housed in an 8-LFPAK package, facilitating surface mount assembly. Key parameters include a gate charge (Qg) of 147 nC at 10 V and input capacitance (Ciss) of 12300 pF at 15 V. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Ta), 410A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.65mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 188W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 280µA |
| Supplier Device Package | 8-LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 147 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 15 V |
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