NTMFS6H858NT1G
TRENCH 8 80V NFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6H858NT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features an 80V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 8.4A at ambient temperature and 29A at case temperature. With a maximum on-resistance (Rds On) of 20.7mOhm at 5A and 10V Vgs, it offers low conduction losses. The TRENCH 8 technology ensures excellent performance characteristics. Key parameters include a gate charge (Qg) of 8.9 nC and input capacitance (Ciss) of 510 pF. This MOSFET is available in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Operating temperature ranges from -55°C to 175°C. The NTMFS6H858NT1G finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 37 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.7mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 40 V |
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