NTMFS6H848NT1G
MOSFET N-CH 80V 13A/57A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6H848NT1G is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 13 A at 25°C ambient temperature, scaling to 57 A when measured at the case temperature. Its low on-resistance (Rds(on)) of a maximum of 9.4 mOhm at 10 A and 10 V gate-to-source drive is achieved with a 10 V gate drive voltage. The device exhibits a maximum gate charge (Qg) of 16 nC at 10 V and an input capacitance (Ciss) of 1180 pF at 40 V. With a maximum power dissipation of 3.7 W (ambient) and 73 W (case), it is suitable for demanding thermal environments. This MOSFET is housed in a 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5-lead variant, and is supplied on tape and reel for automated assembly. It finds application in various power management solutions within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 37 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 73W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 70µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 40 V |
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