NTMFS6H836NT1G
MOSFET N-CH 80V 15A/74A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6H836NT1G is an N-Channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 15A at ambient temperature and 74A at case temperature. With a low on-resistance (Rds On) of 6.7 mOhm at 15A and 10V Vgs, this MOSFET offers efficient power delivery. The device supports gate drive voltages from 6V to 10V and has a maximum gate charge (Qg) of 25 nC at 10V. Input capacitance (Ciss) is specified at 1640 pF maximum at 40V Vds. This component is housed in a 5-DFN (5x6) package, also known as 8-SOFL, for surface mounting. It operates across a wide temperature range of -55°C to 175°C (TJ) and dissipates up to 3.7W (Ta) or 89W (Tc). This MOSFET is suitable for use in automotive, industrial power control, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 37 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 95µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 40 V |
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