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NTMFS6B14NT3G

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NTMFS6B14NT3G

MOSFET N-CH 100V 10A/50A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS6B14NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 10 A at ambient temperature and 50 A at case temperature. With a maximum Rds On of 15 mOhm at 20 A and 10 V, it provides efficient power handling. The device dissipates up to 3.1 W at ambient temperature and 77 W at case temperature. Packaged in a 5-DFN (5x6) (8-SOFL) surface mount configuration, it operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 1300 pF at 50 V. This MOSFET is suitable for use in various industries, including automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 50 V

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