NTMFS6B14NT1G
MOSFET N-CH 100V 10A/50A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6B14NT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current capability of 10A (ambient) or 50A (case). With a low on-resistance of 15mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 20 nC (max) at 10V and input capacitance (Ciss) of 1300 pF (max) at 50V. Power dissipation is rated at 3.1W (ambient) and 77W (case). This MOSFET operates across a temperature range of -55°C to 150°C and is supplied on tape and reel. It finds application in industries such as automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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