NTMFS6B05NT1G
MOSFET N-CH 100V 16A/104A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6B05NT1G is an N-channel Power MOSFET designed for high-efficiency power management applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current capability of 16 A at 25°C ambient and 104 A at 25°C case temperature. With a low on-resistance (Rds On) of 8 mOhm at 20 A and 10 V, and a maximum power dissipation of 3.3 W (ambient) or 138 W (case), it is suitable for demanding power conversion tasks.
Key parameters include a gate charge (Qg) of 44 nC at 10 V and input capacitance (Ciss) of 3100 pF at 50 V. The device operates over a temperature range of -55°C to 150°C and supports drive voltages from 6 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V. Packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) footprint, the NTMFS6B05NT1G is supplied on tape and reel. This MOSFET is commonly utilized in industrial and automotive sectors for power supply units, motor control, and DC-DC converters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 138W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
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