NTMFS6B03NT3G
MOSFET N-CH 100V 19A/132A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMFS6B03NT3G, a N-Channel MOSFET, offers a drain-source voltage (Vdss) of 100 V. This device features a continuous drain current (Id) of 19A at 25°C ambient and 132A at 25°C case temperature, with a maximum power dissipation of 3.4W (ambient) and 165W (case). The NTMFS6B03NT3G exhibits a low on-resistance (Rds On) of 4.8mOhm at 20A and 10V drive voltage. Key parameters include a gate charge (Qg) of 58 nC at 10V and input capacitance (Ciss) of 4200 pF at 50V. Designed for surface mounting, it is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6), supplied on tape and reel. This component is suitable for applications in power management and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 132A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
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