NTMFS6B03NT1G
MOSFET N-CH 100V 19A/132A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS6B03NT1G is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and offers a continuous drain current (Id) of 19A at ambient temperature (Ta) and 132A at case temperature (Tc). With a maximum Rds On of 4.8mOhm at 20A and 10V, it delivers efficient power handling, with power dissipation rated at 3.4W (Ta) and 165W (Tc). The device utilizes 10V gate drive, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a maximum gate charge (Qg) of 58 nC at 10V and a maximum input capacitance (Ciss) of 4200 pF at 50V. The NTMFS6B03NT1G is housed in an 8-PowerTDFN, 5-Lead package (5x6) and is supplied on a Tape & Reel. This MOSFET is suitable for use in power conversion, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 132A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
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