NTMFS5H663NLT1G
T8 60V LOW COSSManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMFS5H663NLT1G is an N-Channel Power MOSFET designed for high-performance switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 15 A at 25°C, with a maximum power dissipation of 3 W. The Rds On is specified at a low 7.2 mOhm at 20 A and 10 V, contributing to efficient operation. Key parameters include a maximum Gate Charge (Qg) of 17 nC at 10 V and an Input Capacitance (Ciss) of 1131 pF at 30 V. It operates within a temperature range of -55°C to 150°C. The NTMFS5H663NLT1G is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. This component finds application in power management solutions across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 37 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 56µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1131 pF @ 30 V |
| Qualification | - |
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