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NTMFS5H425NLT1G

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NTMFS5H425NLT1G

MOSFET N-CH 40V 25A/118A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5H425NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 25A at 25°C ambient and 118A at 25°C case temperature. With a maximum Rds(on) of 2.8mOhm at 20A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 30nC at 10V Vgs and input capacitance (Ciss) of 1950pF at 20V Vds. The power dissipation is rated at 3W (Ta) and 69W (Tc). The NTMFS5H425NLT1G is housed in a 5-DFN (5x6) 8-SOFL package, suitable for surface mounting. Its robust characteristics make it applicable in industries such as automotive and industrial power management. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 20 V

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