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NTMFS5H414NLT1G

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NTMFS5H414NLT1G

MOSFET N-CH 40V 35A/210A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5H414NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 40V with a continuous drain current (Id) of 35A at 25°C ambient and 210A at 25°C case temperature. The low on-resistance (Rds On) of 1.4mOhm at 20A and 10V gate drive ensures efficient power delivery. Key electrical characteristics include a maximum gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 4550 pF at 20V. With a maximum power dissipation of 3.1W (ambient) and 110W (case), it operates reliably across a wide temperature range from -55°C to 150°C (TJ). The device is housed in a compact 5-DFN (5x6) 8-SOFL package, suitable for surface mounting. This MOSFET is utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4550 pF @ 20 V

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