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NTMFS5C682NLT1G

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NTMFS5C682NLT1G

MOSFET N-CH 60V 25A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C682NLT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage rating and a continuous drain current capability of 25A at 25°C (Tc). With a maximum Rds(on) of 21mOhm at 10A and 10V Vgs, it offers efficient power handling. The NTMFS5C682NLT1G supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 5 nC at 10V. Its input capacitance (Ciss) is rated at 410 pF (max) at 25V. The component is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting, and dissipates up to 28W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in various industries including automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)28W (Tc)
Vgs(th) (Max) @ Id2V @ 16µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 25 V

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