NTMFS5C646NLT3G
MOSFET N-CH 60V 20A/93A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS5C646NLT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage rating and supports continuous drain currents of 20A at ambient temperature and 93A at case temperature. The MOSFET exhibits a low on-resistance of 4.7mOhm at 50A and 10V gate drive, with a maximum gate charge of 33.7 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2164 pF at 25V. The device is housed in a compact 5x6mm 5-DFN (8-SOFL) package, suitable for surface mounting. Power dissipation is 3.7W (Ta) and 79W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V |
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