NTMFS5C645NT1G
60 V 4.5 M 94 A SINGLE N CHANNELManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C645NT1G is an N-Channel Power MOSFET designed for demanding power applications. This device features a drain-source voltage (Vdss) of 60 V and a low on-resistance (Rds On) of 4.5 mOhm at a continuous drain current (Id) of 50 A and a gate-source voltage (Vgs) of 10 V. It offers a continuous drain current capability of 20 A at 25°C ambient temperature and 94 A at 25°C case temperature. The MOSFET exhibits a maximum power dissipation of 3.7 W (Ta) and 80 W (Tc). Key parameters include a gate charge (Qg) of 20.4 nC at 10 V and input capacitance (Ciss) of 1510 pF at 25 V. The NTMFS5C645NT1G is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in automotive, industrial, and power supply applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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