NTMFS5C645NLT3G
MOSFET N-CH 60V 22A/100A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C645NLT3G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 60V drain-source breakdown voltage and a continuous drain current capability of 22A at ambient temperature (40°C) and 100A at case temperature (25°C), this component offers robust performance. Its low on-resistance of 4mOhm at 50A and 10V Vgs makes it suitable for high-efficiency power conversion. The NTMFS5C645NLT3G boasts a maximum power dissipation of 3.7W at ambient and 79W at case temperature. Key electrical characteristics include a gate charge (Qg) of 34 nC at 10V Vgs and an input capacitance (Ciss) of 2200 pF at 50V Vds. This MOSFET is housed in a 5-DFN (5x6) package, also referenced as 8-PowerTDFN, 5 Leads, suitable for surface mounting. Its operating temperature range is -55°C to 175°C. This component finds application in automotive and industrial power management systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
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