NTMFS5C612NT1G-TE
MOSFET N-CH 60V 35A/230A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C612NT1G-TE is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and offers a continuous drain current (Id) of 35A at ambient temperature and 230A at case temperature. With a low on-resistance (Rds On) of 1.6mOhm at 50A and 10V, it minimizes conduction losses. The device supports a maximum power dissipation of 3.8W (Ta) and 170W (Tc), and operates across a temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 60.2 nC (max) and input capacitance (Ciss) of 4830 pF (max). The NTMFS5C612NT1G-TE is supplied in an 8-PowerTDFN, 5-lead package, commonly used in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4830 pF @ 25 V |
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