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NTMFS5C612NLWFT1G

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NTMFS5C612NLWFT1G

MOSFET N-CH 60V 235A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS5C612NLWFT1G, an N-Channel Power MOSFET, offers a drain-source voltage of 60 V and a continuous drain current of 235 A at 25°C (Tc). This device features a low on-resistance of 1.5 mOhm at 50 A and 10 V, with a gate charge of 41 nC at 4.5 V. The input capacitance (Ciss) is rated at a maximum of 6660 pF at 25 V. Designed for surface mounting, it comes in an 8-PowerTDFN, 5-lead package (5x6 footprint). Power dissipation is 3.8 W (Ta) and 167 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and high-power switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C235A (Tc)
Rds On (Max) @ Id, Vgs1.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6660 pF @ 25 V

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