NTMFS5C612NLT3G
MOSFET N-CH 60V 36A/235A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS5C612NLT3G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36 A at 25°C ambient temperature, scalable to 235 A under case temperature conditions. The NTMFS5C612NLT3G offers a low on-resistance (Rds On) of 1.5 mOhm at 50 A and 10 V Vgs, contributing to reduced conduction losses. Power dissipation is rated at 3.8 W (Ta) and 167 W (Tc). Key electrical parameters include a maximum gate charge (Qg) of 91 nC at 10 V Vgs and an input capacitance (Ciss) of 6660 pF at 25 V Vds. The MOSFET operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250 µA. It is packaged in an 8-PowerTDFN, 5-Lead (5x6) DFN package, suitable for surface mounting, and supplied on a tape and reel. This device is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 235A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
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