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NTMFS5C456NLT3G

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NTMFS5C456NLT3G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C456NLT3G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage and a continuous drain current capability of 87A at 25°C (Tc). Its low on-resistance of 3.7mOhm at 20A and 10V Vgs ensures efficient power transfer. The MOSFET is offered in a compact 5-DFN (5x6) package, providing a 5-lead, 8-PowerTDFN footprint for surface mounting. With a maximum gate charge of 18nC at 10V and input capacitance of 1600pF at 25V, it supports high-frequency switching. The NTMFS5C456NLT3G operates across an extended temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 3.6W (Ta) and 55W (Tc). This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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