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NTMFS5C442NLTT3G

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NTMFS5C442NLTT3G

MOSFET N-CH 40V 28A/130A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS5C442NLTT3G is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 28A at 25°C ambient temperature, scaling up to 130A under continuous drain conditions at case temperature (Tc). The NTMFS5C442NLTT3G exhibits a low on-resistance (Rds On) of a maximum of 2.5mOhm at 50A and 10V gate-source voltage. Power dissipation is rated at 3.7W (Ta) and 83W (Tc). Key electrical parameters include a gate charge (Qg) of 50 nC maximum at 10V and input capacitance (Ciss) of 3100 pF maximum at 25V. The MOSFET supports drive voltages from 4.5V to 10V with a maximum Vgs(th) of 2V at 250µA and a ±20V Vgs(max). The NTMFS5C442NLTT3G is housed in a 5-DFN (5x6) (8-SOFL) package, specified for surface mounting and operating temperatures from -55°C to 175°C. This component is commonly utilized in automotive, industrial, and consumer electronics power management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V

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