NTMFS5C442NLTT1G
MOSFET N-CH 40V 28A/130A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C442NLTT1G is an N-Channel Power MOSFET designed for demanding automotive and industrial applications. This device features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 28A at a typical ambient temperature (Ta) and 130A at a case temperature (Tc). With a low on-resistance (Rds On) of 2.5mOhm at 50A and 10V, it minimizes conduction losses. The MOSFET supports a gate drive range of 4.5V to 10V, with a maximum gate-source voltage (Vgs(max)) of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. It presents a maximum input capacitance (Ciss) of 3100pF at 25V and a gate charge (Qg) of 50nC at 10V. The NTMFS5C442NLTT1G is housed in an 8-PowerTDFN, 5-lead package with a 5x6 (8-SOFL) footprint, suitable for surface mounting. It is supplied on tape and reel (TR) and operates across a wide temperature range from -55°C to 175°C. Key power dissipation figures are 3.7W (Ta) and 83W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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