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NTMFS5C442NLT3G

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NTMFS5C442NLT3G

MOSFET N-CH 40V 27A/130A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C442NLT3G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current capability of 27A at 25°C ambient temperature, scaling to 130A at 25°C case temperature. With a low on-resistance of 2.8mOhm maximum at 50A and 10V gate voltage, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 3.1W (Ta) and 69W (Tc), supported by a wide operating temperature range of -55°C to 175°C (TJ). It is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key electrical characteristics include a 50nC maximum gate charge and 3100pF maximum input capacitance. This component is utilized in industries such as automotive and industrial power conversion.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V

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