NTMFS5C430NT1G
MOSFET N-CH 40V 35A/185A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C430NT1G is an N-Channel MOSFET designed for robust power switching applications. This component features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 35A at ambient temperature (Ta) and 185A at case temperature (Tc). With a maximum on-resistance (Rds On) of 1.7mOhm at 50A and 10V drive voltage, it facilitates efficient power transfer. The device boasts a low gate charge (Qg) of 47 nC at 10V and an input capacitance (Ciss) of 3300 pF at 25V. Rated for a maximum power dissipation of 3.8W (Ta) and 106W (Tc), it operates across an extended temperature range from -55°C to 175°C. The NTMFS5C430NT1G is housed in a 5-DFN (5x6) package, also identified as 8-PowerTDFN, 5 leads, suitable for surface mounting. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 106W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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