NTMFS5C430NLT3G
MOSFET N-CH 40V 200A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C430NLT3G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 200 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5 mOhm at 50 A and 10 V, it delivers excellent conduction efficiency. The MOSFET is packaged in a 5-DFN (5x6) (8-SOFL) configuration, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 70 nC maximum at 10 V and an input capacitance (Ciss) of 4300 pF maximum at 20 V. Power dissipation is rated at 3.8 W (Ta) and 110 W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in automotive, industrial power supplies, and high-current power switching systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 20 V |
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