NTMFS5C426NT3G
MOSFET N-CH 40V 41A/235A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C426NT3G is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 41 A at 25°C ambient temperature, scaling to 235 A at 25°C case temperature. With a maximum Rds(on) of 1.3 mOhm at 50 A and 10 V gate drive, it provides low conduction losses. The device offers a maximum power dissipation of 3.8 W (Ta) and 128 W (Tc). Key parameters include a gate charge (Qg) of 65 nC and input capacitance (Ciss) of 4300 pF at specified conditions. The NTMFS5C426NT3G is housed in a 5-DFN (5x6) package, suitable for surface mounting. It operates across a temperature range of -55°C to 175°C. This MOSFET is utilized in automotive, industrial, and consumer electronics sectors where robust power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 235A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 128W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
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