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NTMFS5C426NT1G

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NTMFS5C426NT1G

MOSFET N-CH 40V 41A/235A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C426NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V Drain-to-Source Voltage (Vdss) and offers a continuous drain current of 41A at a case temperature of 25°C (41A ambient), scaling up to 235A under specific thermal conditions. With a maximum Power Dissipation of 3.8W (ambient) and 128W (case), it is suitable for high-power switching. The NTMFS5C426NT1G exhibits a low on-resistance of 1.3mOhm at 50A and 10V gate drive. Key characteristics include a gate charge of 65nC and input capacitance of 4300pF at 25V. The device operates across a temperature range of -55°C to 175°C and is packaged in a 5-DFN (5x6) (8-SOFL) footprint, provided on tape and reel. This component is utilized in various industries, including automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 25 V

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