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NTMFS5C410NLTWFT3G

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NTMFS5C410NLTWFT3G

MOSFET N-CH 40V 50A/330A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C410NLTWFT3G is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a drain-source breakdown voltage of 40V and offers a continuous drain current capability of 50A at 25°C ambient temperature, scaling to 330A under a controlled case temperature. With a maximum on-resistance of 0.9 mOhm at 50A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 143 nC at 10V. Input capacitance (Ciss) is specified at 8862 pF maximum at 25V. The NTMFS5C410NLTWFT3G is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, and is supplied in Tape & Reel packaging. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8862 pF @ 25 V

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