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NTMFS5C410NLTT1G

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NTMFS5C410NLTT1G

MOSFET N-CH 40V 50A/330A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C410NLTT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 50A at 25°C ambient and 330A at 25°C case temperature. With a maximum Rds(on) of 0.9mOhm at 50A and 10V, it provides efficient power handling, dissipating up to 3.8W (Ta) or 167W (Tc). The MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mount applications. Key electrical parameters include a gate charge (Qg) of 143 nC (Max) at 10V and input capacitance (Ciss) of 8862 pF (Max) at 25V. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. This component finds use in industries such as automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8862 pF @ 25 V

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