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NTMFS5C410NLT3G

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NTMFS5C410NLT3G

MOSFET N-CH 40V 46A/302A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C410NLT3G is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 46A at ambient temperature and 302A at case temperature. The Rds(On) is specified at a maximum of 0.9mOhm at 50A and 10V Vgs. With a maximum power dissipation of 3.2W (Ta) and 139W (Tc), this MOSFET is suitable for demanding applications. The device operates across a wide temperature range of -55°C to 175°C (TJ). It is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN 5 Leads, for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 8862pF (Max) at 25V and a gate charge (Qg) of 143nC (Max) at 10V. Drive voltages range from 4.5V to 10V. This component finds utility in automotive, industrial, and consumer electronics power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8862 pF @ 25 V

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