NTMFS5C410NLT1G
MOSFET N-CH 40V 46A/302A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5C410NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 46A at 25°C ambient temperature, scaling to 302A at 25°C case temperature. Its low on-resistance of 0.9 mOhm at 50A and 10V gate-source voltage minimizes conduction losses. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, with a supplier device package of 5-DFN (5x6) (8-SOFL), facilitating efficient heat dissipation with a maximum power dissipation of 3.2W (Ta) and 139W (Tc). Gate drive voltages range from 4.5V to 10V. Key electrical characteristics include a maximum gate charge of 143 nC at 10V and an input capacitance of 8862 pF at 25V. Operating temperature is specified from -55°C to +175°C. This device is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 302A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8862 pF @ 25 V |
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