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NTMFS5C404NLTWFT1G

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NTMFS5C404NLTWFT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C404NLTWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 370A at 25°C (Tc). With a low on-resistance (Rds On) of 0.75mOhm at 50A and 10V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. Key parameters include a gate charge (Qg) of 181 nC at 10V and input capacitance (Ciss) of 12168 pF at 25V. This component offers significant power handling capability, with a maximum dissipation of 3.9W (Ta) and 200W (Tc). It is housed in an 8-PowerTDFN, 5-Lead package, specifically a 5-DFN (5x6) (8-SOFL) supplier device package, suitable for surface mounting. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power supply circuits, automotive systems, and industrial power management. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C370A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12168 pF @ 25 V

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