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NTMFS5C404NLTT3G

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NTMFS5C404NLTT3G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS5C404NLTT3G is an N-Channel Power MOSFET designed for high-current applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 370A at 25°C (Tc). With a low on-resistance of 0.75mOhm at 50A and 10Vgs, it offers efficient power handling, with a maximum power dissipation of 200W (Tc). The device utilizes MOSFET (Metal Oxide) technology and is supplied in an 8-PowerTDFN, 5-DFN (5x6) package, suitable for surface mounting. Key electrical parameters include an input capacitance (Ciss) of 12168pF at 25V and a gate charge (Qg) of 181nC at 10V. The operating temperature range is -55°C to 175°C. This device is commonly employed in demanding power conversion and management systems across automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C370A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12168 pF @ 25 V

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