NTMFS5834NLT1G
MOSFET N-CH 40V 14A/75A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5834NLT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 40V drain-source voltage (Vds) and supports a continuous drain current of 14A at a typical ambient temperature (Ta) and 75A at a case temperature (Tc). Its low on-resistance of 9.3mOhm at 20A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. The device offers a maximum power dissipation of 3.6W (Ta) and 107W (Tc), making it suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 24 nC (max) at 10V Vgs and an input capacitance (Ciss) of 1231 pF (max) at 20V Vds. Operable across a temperature range of -55°C to 175°C, this MOSFET is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. It is commonly utilized in automotive, industrial, and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1231 pF @ 20 V |