NTMFS5832NLT1G
MOSFET N-CH 40V 20A/111A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS5832NLT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 20A at 25°C ambient, scaling to 111A at 25°C case temperature. With a low on-resistance (Rds On) of 4.2mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 3.1W (ambient) and 96W (case), enabling robust thermal performance. It operates with a gate drive voltage range of 4.5V to 10V and has a maximum gate charge (Qg) of 51nC at 10V. The input capacitance (Ciss) is a maximum of 2700pF at 25V. Packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) surface mount configuration, this MOSFET is suitable for automotive, industrial power supply, and power management systems. It is supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 111A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |