NTMFS5830NLT1G
MOSFET N-CH 40V 28A/172A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS5830NLT1G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-to-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 28A at 25°C ambient and up to 172A at 25°C case temperature. With a maximum on-resistance (Rds(on)) of 2.3mOhm at 20A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 113 nC at 10V, facilitating fast switching performance. Input capacitance (Ciss) is specified at 5880 pF at 25V. Packaged in an 8-PowerTDFN, 5 Leads (5x6) 5-DFN (8-SOFL) configuration, it is suitable for surface mount assembly. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 172A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5880 pF @ 25 V |