NTMFS4H02NT3G
MOSFET N-CH 25V 37A/193A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4H02NT3G is an N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 25 V and offers a continuous drain current capability of 37 A at ambient temperature and 193 A at case temperature. The device exhibits a low on-resistance of 1.4 mOhm at 30 A drain current and 10 V gate-source voltage. It supports a gate drive voltage range from 4.5 V to 10 V. The NTMFS4H02NT3G boasts a maximum junction temperature of 150°C and a maximum power dissipation of 3.13 W at ambient temperature, scaling to 83 W at case temperature. Key electrical characteristics include a maximum gate charge (Qg) of 38.5 nC and a maximum input capacitance (Ciss) of 2651 pF. This MOSFET is housed in an 8-PowerTDFN, 5-lead package (5x6) and is supplied on a tape and reel. Typical industries utilizing this component include automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 193A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2651 pF @ 12 V |
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