NTMFS4H02NT1G
MOSFET N-CH 25V 37A/193A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4H02NT1G is an N-channel Power MOSFET designed for demanding applications. This component features a 25V drain-source voltage (Vdss) and supports continuous drain currents of 37A at ambient temperature (Ta) and 193A at case temperature (Tc). Power dissipation ratings are 3.13W (Ta) and 83W (Tc).
Optimized for efficient switching, the NTMFS4H02NT1G offers a maximum on-resistance (Rds On) of 1.4mOhm at 30A and 10V gate-source voltage. Gate drive voltage ranges from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 38.5 nC at 10V and a maximum input capacitance (Ciss) of 2651 pF at 12V drain-source voltage. The device operates within a junction temperature range of 150°C.
Packaged in a 5-DFN (5x6) (8-SOFL) surface-mount configuration, this MOSFET is supplied on tape and reel. Its robust performance makes it suitable for power management solutions in automotive, industrial, and computing sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 193A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2651 pF @ 12 V |
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