NTMFS4H02NFT1G
MOSFET N-CH 25V 37A/193A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4H02NFT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 37A at ambient temperature and 193A at case temperature. With a maximum Rds(on) of 1.4mOhm at 30A and 10V gate drive, it offers low conduction losses. The MOSFET exhibits a gate charge of 40.9 nC at 10V and input capacitance of 2652 pF at 12V. It is packaged in an 8-PowerTDFN, 5-lead (5x6) DFN package and operates up to 150°C. The NTMFS4H02NFT1G is suitable for use in automotive and industrial power supply designs, motor control, and power conversion systems. It is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 193A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 40.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2652 pF @ 12 V |
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