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NTMFS4H01NFT3G

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NTMFS4H01NFT3G

MOSFET N-CH 25V 54A/334A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4H01NFT3G, an N-Channel Power MOSFET, offers a 25V drain-source voltage rating and robust current handling capabilities, with a continuous drain current of 54A at 25°C ambient and 334A at 25°C case temperature. This device features a low on-resistance of 0.7mOhm maximum at 30A and 10V gate-source voltage. The NTMFS4H01NFT3G utilizes advanced MOSFET technology, providing a maximum power dissipation of 3.2W (ambient) and 125W (case). Key electrical characteristics include a gate charge of 82 nC maximum at 10V Vgs and input capacitance of 5538 pF maximum at 12V Vds. The component is housed in an 8-PowerTDFN, 5-lead package with a 5x6mm footprint, suitable for surface mounting. Operating temperature is rated up to 150°C (TJ). This MOSFET is commonly employed in power management applications across automotive and industrial sectors. The NTMFS4H01NFT3G is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs0.7mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5538 pF @ 12 V

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