NTMFS4H01NFT1G
MOSFET N-CH 25V 54A/334A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4H01NFT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 25V and offers exceptional continuous drain current capabilities of 54A at 25°C ambient and 334A at 25°C case temperature. With a low on-resistance (Rds On) of 0.7mOhm at 30A and 10V gate drive, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.1V at 250µA. Key parameters include a gate charge (Qg) of 82nC at 10V and input capacitance (Ciss) of 5538pF at 12V. The NTMFS4H01NFT1G is supplied in a 5-DFN (5x6) package (8-SOFL) for surface mounting and is rated for operation up to 150°C junction temperature. Power dissipation is 3.2W (Ta) and 125W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Ta), 334A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 12 V |
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