NTMFS4H013NFT3G
MOSFET N-CH 25V 43A/269A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4H013NFT3G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 25V and offers a continuous drain current capability of 43A at ambient temperature and 269A at case temperature. Its low on-resistance (Rds On Max) of 0.9mOhm at 30A and 10V gate drive ensures minimal conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. With a junction temperature rating of 150°C, it can dissipate up to 2.7W (Ta) or 104W (Tc). Key parameters include a maximum input capacitance (Ciss) of 3923pF at 12V and a maximum gate charge (Qg) of 56nC at 10V. The NTMFS4H013NFT3G is supplied in a 5-DFN (5x6) package, offering a 5-lead configuration, and is available on tape and reel. This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 269A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3923 pF @ 12 V |
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