NTMFS4C822NAT1G
TRENCH 6 30V NCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C822NAT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage (Vds) and a low on-resistance (Rds(on)) of 1.7 mOhm at 30A and 10V gate drive. With continuous drain current capabilities of 30A (ambient) and 136A (case), and a maximum power dissipation of 64W (case), it is suitable for demanding thermal environments. The device utilizes onsemi's TRENCH 6 technology for improved performance. Key specifications include a maximum gate charge (Qg) of 45.2 nC at 10V and an input capacitance (Ciss) of 3071 pF at 15V. The NTMFS4C822NAT1G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6), mounted via surface mount. Operating temperature range is -55°C to 150°C. Applications include automotive and industrial power management. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 136A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 64W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3071 pF @ 15 V |
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