NTMFS4C810NT1G
MOSFET N-CH 30V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C810NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 8.2A at 25°C (Ta). With a low Rds(On) of 5.88mOhm at 30A and 10V, coupled with a maximum Gate Charge (Qg) of 18.6 nC at 10V, it facilitates efficient switching. The device offers a maximum power dissipation of 750mW (Ta) and operates across a wide temperature range of -55°C to 150°C (TJ). It is available in a 5-DFN (5x6) package, also specified as 8-PowerTDFN, 5 Leads, suitable for surface mounting and supplied on tape and reel. This MOSFET is utilized in various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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